| PART |
Description |
Maker |
| FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 75A条一（c
Molding Type Module
|
Sharp, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXGQ100N60Y4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
|
|
| DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| C67070-A2710-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CM50DY12E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 50A条一（c
|
Mitsubishi Electric, Corp.
|
| GP200MHB12S |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 200安培我（丙）
|
Mitel Networks, Corp.
|
| DIM250PHM33-TL000 DIM250PHM33-TL000-15 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| SIM150D12SV3 |
“HALF-BRIDGE IGBT Module
“HALF-BRIDGE” IGBT Module
|
SemiWell Semiconductor
|
| DIM400PHM17-A000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| BSM300GA170DN2E3166 300A17E2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
| FB514 FB612 FB614 FB522 FB524 FB523 |
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|25A I(T) 晶闸管模块|桥|半CNTLD |消委会| 1.2KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|600V V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|800V V(RRM)|25A I(T)
|
Square D by Schneider Electric
|
